The RW1E025RP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the RW1E025RP transistor as follows.
| Transistor Code | RW1E025RP | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | P-Channel | |
| Package | WEMT6 | |
| Drain-Source Voltage (Maximum) | VDS | 30V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 2.5A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.055Ohm |
| Power Dissipation (Maximum) | PD | 0.7W |
| Drain-Source Capacitance | 70pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 12nS | |
UXPython is not the creator or an official representative of the RW1E025RP MOSFET transistor. You can download the official RW1E025RP MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
RW1A030AP MOSFET Transistor
RW1A025AP MOSFET Transistor
RW1C015UN MOSFET Transistor
RW1E014SN MOSFET Transistor
RW1A020ZP MOSFET Transistor
RW1A013ZP MOSFET Transistor
RW1E015RP MOSFET Transistor
RW1C020UN MOSFET Transistor
RW1C025ZP MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.