RW1E014SN MOSFET Transistor

The RW1E014SN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RW1E014SN transistor as follows.

RW1E014SN Transistor Specification

Transistor Code		RW1E014SN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WEMT6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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