RW1C020UN MOSFET Transistor

The RW1C020UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RW1C020UN transistor as follows.

RW1C020UN Transistor Specification

Transistor Code		RW1C020UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WEMT6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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