RW1A020ZP MOSFET Transistor

The RW1A020ZP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RW1A020ZP transistor as follows.

RW1A020ZP Transistor Specification

Transistor Code		RW1A020ZP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		WEMT6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

UXPython is not the creator or an official representative of the RW1A020ZP MOSFET transistor. You can download the official RW1A020ZP MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

RW1A030AP MOSFET Transistor RW1C020UN MOSFET Transistor RW1A013ZP MOSFET Transistor RW1E015RP MOSFET Transistor RW1E025RP MOSFET Transistor RW1C025ZP MOSFET Transistor RW1E014SN MOSFET Transistor RW1C015UN MOSFET Transistor RW1A025AP MOSFET Transistor