RW1A013ZP MOSFET Transistor

The RW1A013ZP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RW1A013ZP transistor as follows.

RW1A013ZP Transistor Specification

Transistor Code		RW1A013ZP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		WEMT6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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