RUQ050N02 MOSFET Transistor

The RUQ050N02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUQ050N02 transistor as follows.

RUQ050N02 Transistor Specification

Transistor Code		RUQ050N02
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Transistor SMD Code		XG
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS

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