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RUM003N02T2L MOSFET Transistor

The RUM003N02T2L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUM003N02T2L transistor as follows.

Circuit diagram symbol of the RUM003N02T2L transistor

RUM003N02T2L Transistor Specification

Transistor Code RUM003N02T2L
Transistor Type MOSFET
Control Channel Type N-Channel
Package VMT3
Transistor SMD Code QT
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 10pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V

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