RUM002N02T2L MOSFET Transistor

The RUM002N02T2L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUM002N02T2L transistor as follows.

RUM002N02T2L Transistor Specification

Transistor Code		RUM002N02T2L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VMT3
Transistor SMD Code		QR
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V

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