RUM001L02 MOSFET Transistor

The RUM001L02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUM001L02 transistor as follows.

RUM001L02 Transistor Specification

Transistor Code		RUM001L02
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VMT3
Transistor SMD Code		RW
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		3.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		1V

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