RUF025N02 MOSFET Transistor

The RUF025N02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUF025N02 transistor as follows.

RUF025N02 Transistor Specification

Transistor Code		RUF025N02
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TUMT3
Transistor SMD Code		XE
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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