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RUF015N02 MOSFET Transistor

The RUF015N02 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUF015N02 transistor as follows.

Circuit diagram symbol of the RUF015N02 transistor

RUF015N02 Transistor Specification

Transistor Code RUF015N02
Transistor Type MOSFET
Control Channel Type N-Channel
Package TUMT3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 0.8W
Drain-Source Capacitance 18pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS

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