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RUE002N02TL MOSFET Transistor

The RUE002N02TL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RUE002N02TL transistor as follows.

Circuit diagram symbol of the RUE002N02TL transistor

RUE002N02TL Transistor Specification

Transistor Code RUE002N02TL
Transistor Type MOSFET
Control Channel Type N-Channel
Package EMT3
Transistor SMD Code QR
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 10pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V

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