RU8205C6 MOSFET Transistor

The RU8205C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU8205C6 transistor as follows.

RU8205C6 Transistor Specification

Transistor Code		RU8205C6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		4*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1.5V

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