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RU8080S MOSFET Transistor

The RU8080S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU8080S transistor as follows.

Circuit diagram symbol of the RU8080S transistor

RU8080S Transistor Specification

Transistor Code RU8080S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 520pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 95nS
Gate-Threshold Voltage (Maximum) 4V

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