RU8080R MOSFET Transistor

The RU8080R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU8080R transistor as follows.

RU8080R Transistor Specification

Transistor Code		RU8080R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		520pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		4V

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