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RU7582S MOSFET Transistor

The RU7582S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU7582S transistor as follows.

Circuit diagram symbol of the RU7582S transistor

RU7582S Transistor Specification

Transistor Code RU7582S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 82A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 176W
Drain-Source Capacitance 460pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V

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