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RU75210R MOSFET Transistor

The RU75210R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU75210R transistor as follows.

Circuit diagram symbol of the RU75210R transistor

RU75210R Transistor Specification

Transistor Code RU75210R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 210A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 1050pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V

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