RU75110S MOSFET Transistor

The RU75110S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU75110S transistor as follows.

RU75110S Transistor Specification

Transistor Code		RU75110S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4V

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