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RU75110R MOSFET Transistor

The RU75110R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU75110R transistor as follows.

Circuit diagram symbol of the RU75110R transistor

RU75110R Transistor Specification

Transistor Code RU75110R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 188W
Drain-Source Capacitance 450pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 4V

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