RU70200R MOSFET Transistor

The RU70200R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU70200R transistor as follows.

RU70200R Transistor Specification

Transistor Code		RU70200R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	70V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		158nC

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