RU70190R MOSFET Transistor

The RU70190R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU70190R transistor as follows.

RU70190R Transistor Specification

Transistor Code		RU70190R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	70V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		96nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		145nC

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