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RU70100R MOSFET Transistor

The RU70100R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU70100R transistor as follows.

Circuit diagram symbol of the RU70100R transistor

RU70100R Transistor Specification

Transistor Code RU70100R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 70V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0065Ohm
Power Dissipation (Maximum) PD 188W
Drain-Source Capacitance 470pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4V

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