The RU6888M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the RU6888M transistor as follows.
| Transistor Code | RU6888M | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | PDFN5060 | |
| Drain-Source Voltage (Maximum) | VDS | 60V |
| Gate-Source Voltage (Maximum) | VGS | 25V |
| Drain Current (Maximum) | ID | 16A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.008Ohm |
| Power Dissipation (Maximum) | PD | 4.2W |
| Drain-Source Capacitance | 310pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 32nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
UXPython is not the creator or an official representative of the RU6888M MOSFET transistor. You can download the official RU6888M MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
RU3040M MOSFET Transistor
RU40120M MOSFET Transistor
RU3090M MOSFET Transistor
RU2090M MOSFET Transistor
RU3070M MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.