RU6881R MOSFET Transistor

The RU6881R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6881R transistor as follows.

RU6881R Transistor Specification

Transistor Code		RU6881R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	68V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	86A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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