RU6199Q MOSFET Transistor

The RU6199Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6199Q transistor as follows.

RU6199Q Transistor Specification

Transistor Code		RU6199Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0037Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		155nC

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