RU60P60R MOSFET Transistor

The RU60P60R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60P60R transistor as follows.

RU60P60R Transistor Specification

Transistor Code		RU60P60R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	176W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		138nC

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