RU60E6H MOSFET Transistor

The RU60E6H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60E6H transistor as follows.

RU60E6H Transistor Specification

Transistor Code		RU60E6H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		39nS
Gate-Threshold Voltage (Maximum)		2.7V

UXPython is not the creator or an official representative of the RU60E6H MOSFET transistor. You can download the official RU60E6H MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

KP8M4 MOSFET Transistor QM4003S MOSFET Transistor MTB55N10Q8 MOSFET Transistor MTDN9926Q8 MOSFET Transistor FSS275 MOSFET Transistor KDS6375 MOSFET Transistor KQS4901 MOSFET Transistor KRF7307 MOSFET Transistor QM3302S MOSFET Transistor MTE50N15Q8 MOSFET Transistor KP8M7 MOSFET Transistor KRF7379 MOSFET Transistor SM1A12DSK MOSFET Transistor RU20E8H MOSFET Transistor KPA1758 MOSFET Transistor SH8J65 MOSFET Transistor APM4927K MOSFET Transistor QM6301S MOSFET Transistor FSS273 MOSFET Transistor RU40P4H MOSFET Transistor