RU60E25R MOSFET Transistor

The RU60E25R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60E25R transistor as follows.

RU60E25R Transistor Specification

Transistor Code		RU60E25R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		4V

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