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RU6099S MOSFET Transistor

The RU6099S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6099S transistor as follows.

Circuit diagram symbol of the RU6099S transistor

RU6099S Transistor Specification

Transistor Code RU6099S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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