RU6075R MOSFET Transistor

The RU6075R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6075R transistor as follows.

RU6075R Transistor Specification

Transistor Code		RU6075R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

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