RU6070L MOSFET Transistor

The RU6070L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6070L transistor as follows.

RU6070L Transistor Specification

Transistor Code		RU6070L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4V

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