RU6055S MOSFET Transistor

The RU6055S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6055S transistor as follows.

RU6055S Transistor Specification

Transistor Code		RU6055S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	111W
Drain-Source Capacitance		388pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V

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