RU6050L MOSFET Transistor

The RU6050L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6050L transistor as follows.

RU6050L Transistor Specification

Transistor Code		RU6050L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V

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