RU60450Q MOSFET Transistor

The RU60450Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60450Q transistor as follows.

RU60450Q Transistor Specification

Transistor Code		RU60450Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	450A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0018Ohm
Power Dissipation (Maximum)	PD	600W
Drain-Source Capacitance		1450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		230nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		415nC

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