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RU60101R MOSFET Transistor

The RU60101R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60101R transistor as follows.

Circuit diagram symbol of the RU60101R transistor

RU60101R Transistor Specification

Transistor Code RU60101R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 4V

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