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RU60100R MOSFET Transistor

The RU60100R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60100R transistor as follows.

Circuit diagram symbol of the RU60100R transistor

RU60100R Transistor Specification

Transistor Code RU60100R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 130A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 188W
Drain-Source Capacitance 470pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 4V

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