RU5H13R MOSFET Transistor

The RU5H13R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU5H13R transistor as follows.

RU5H13R Transistor Specification

Transistor Code		RU5H13R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V

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