RU55L18R MOSFET Transistor

The RU55L18R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU55L18R transistor as follows.

RU55L18R Transistor Specification

Transistor Code		RU55L18R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		625pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		3V

UXPython is not the creator or an official representative of the RU55L18R MOSFET transistor. You can download the official RU55L18R MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

AP9412GP MOSFET Transistor RU80100R MOSFET Transistor RU3568R MOSFET Transistor AOT11C60 MOSFET Transistor TMP10N80 MOSFET Transistor QM3020P MOSFET Transistor IXTP4N65X2 MOSFET Transistor QM6008P MOSFET Transistor AOT7N60 MOSFET Transistor BUZ12 MOSFET Transistor AOT472 MOSFET Transistor STP11NM60N MOSFET Transistor STP16NS25 MOSFET Transistor APQ57SN10BH MOSFET Transistor TMP9N50S MOSFET Transistor FQP58N08 MOSFET Transistor IPP65R150CFD MOSFET Transistor CSD18502KCS MOSFET Transistor QM3016P MOSFET Transistor STP28N65M2 MOSFET Transistor