RU55111R MOSFET Transistor

The RU55111R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU55111R transistor as follows.

RU55111R Transistor Specification

Transistor Code		RU55111R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	176W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		2.5V

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