RU4099Q MOSFET Transistor

The RU4099Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU4099Q transistor as follows.

RU4099Q Transistor Specification

Transistor Code		RU4099Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		1400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		154nC

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