RU40190Q2 MOSFET Transistor

The RU40190Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU40190Q2 transistor as follows.

RU40190Q2 Transistor Specification

Transistor Code		RU40190Q2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		96nS
Gate-Threshold Voltage (Maximum)		4V

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