RU40120S MOSFET Transistor

The RU40120S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU40120S transistor as follows.

RU40120S Transistor Specification

Transistor Code		RU40120S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		680pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		205nS
Gate-Threshold Voltage (Maximum)		4V

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