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RU40120M MOSFET Transistor

The RU40120M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU40120M transistor as follows.

Circuit diagram symbol of the RU40120M transistor

RU40120M Transistor Specification

Transistor Code RU40120M
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN5060
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 4.2W
Drain-Source Capacitance 680pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 205nS
Gate-Threshold Voltage (Maximum) 4V

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