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RU35122S MOSFET Transistor

The RU35122S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU35122S transistor as follows.

Circuit diagram symbol of the RU35122S transistor

RU35122S Transistor Specification

Transistor Code RU35122S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0037Ohm
Power Dissipation (Maximum) PD 180W
Drain-Source Capacitance 970pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 105nS
Gate-Threshold Voltage (Maximum) 4V

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