RU35122R MOSFET Transistor

The RU35122R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU35122R transistor as follows.

RU35122R Transistor Specification

Transistor Code		RU35122R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0037Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		970pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V

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