RU30P5D MOSFET Transistor

The RU30P5D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30P5D transistor as follows.

RU30P5D Transistor Specification

Transistor Code		RU30P5D
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.5V

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