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RU30P4H MOSFET Transistor

The RU30P4H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30P4H transistor as follows.

Circuit diagram symbol of the RU30P4H transistor

RU30P4H Transistor Specification

Transistor Code RU30P4H
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 130pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 2.5V

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