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RU30L30M MOSFET Transistor

The RU30L30M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30L30M transistor as follows.

Circuit diagram symbol of the RU30L30M transistor

RU30L30M Transistor Specification

Transistor Code RU30L30M
Transistor Type MOSFET
Control Channel Type P-Channel
Package PDFN3333
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 3.5W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 2.5V

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