The RU30E60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the RU30E60M2 transistor as follows.
| Transistor Code | RU30E60M2 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | PDFN3333 | |
| Drain-Source Voltage (Maximum) | VDS | 30V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 21A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.0039Ohm |
| Power Dissipation (Maximum) | PD | 3.5W |
| Drain-Source Capacitance | 380pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 13nS | |
| Gate-Threshold Voltage (Maximum) | 2.4V | |
UXPython is not the creator or an official representative of the RU30E60M2 MOSFET transistor. You can download the official RU30E60M2 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
RU3040M2 MOSFET Transistor
RU3030M2 MOSFET Transistor
RU30L30M MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.