RU30E30L MOSFET Transistor

The RU30E30L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30E30L transistor as follows.

RU30E30L Transistor Specification

Transistor Code		RU30E30L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.5V

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